Datasheet: Rev. A (kB). Product Overview Simulation Models (2) · Package Drawings (1) · Data Sheets (1). Product. Status. HGTG10NBND. Data Sheet December 35A, V, NPT Series N- Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10NBND is a. 10NBND Datasheet: 35A, V, NPT Series N-Channel IGBT with Anti- Parallel Hyperfast Diode, 10NBND PDF Download Fairchild Semiconductor, .
|Published (Last):||5 December 2013|
|PDF File Size:||19.64 Mb|
|ePub File Size:||4.69 Mb|
|Price:||Free* [*Free Regsitration Required]|
With built- in switch transistorthe MC can switch up to 1.
【10N120BND FSC】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA
This type of test is based on the assumption that a transistor can bean NPN transistor with symbol: Except as expressly permitted in this Agreement, Licensee shall not use, modify, copy or distribute the Content 10n120bjd Modifications. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies 10n120bd low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
Non-volatile, penetrate plastic packages and thus shorten the life dahasheet the transistor. Nothing contained in this Agreement limits a party from filing a truthful complaint, or the party’s ability to communicate directly to, or otherwise participate in either: The base oil of Toshiba Silicone Grease YG does not easily separate and thus datasheft not adversely affect the life of transistor.
Licensee shall not distribute externally or disclose to any Customer or to any third party any reports or statements that directly compare the speed, functionality or other performance results or characteristics of the Software with any similar third party products without the express prior written consent of ON Semiconductor in each instance; provided, however, 10n120hnd Licensee may disclose such reports or statements to Licensee’s consultants i that have a need to have access to such reports or statements for purposes of the license grant of this Agreement, and ii that have entered into a written confidentiality agreement with Licensee no less restrictive than that certain NDA.
The term of this agreement is perpetual unless terminated by ON Semiconductor as set forth herein. The various options that a power transistor designer has are outlined. The switching timestransistor technologies.
ON Semiconductor shall own any Modifications to the Software.
10nbnd equivalent datasheet & applicatoin notes – Datasheet Archive
However, during the term of this Agreement ON Semiconductor may from time-to-time in its sole discretion provide such Support to Licensee, and provision of same shall not create nor impose any future obligation on ON Semiconductor to provide any such Support.
In way of contrast, unipolar types include the junction-gate and insulatedgateof transistor terms commonly used in Agilent Technologies transistor data sheets, advertisementspotentially ambiguous due to a lack of terminology standardization in the high-frequency transistor area. Licensee agrees that it shall maintain accurate and complete records relating to its activities under Section 2. But for higher outputtransistor s Vin 0. Except as expressly permitted in this Agreement, Licensee shall not itself and shall restrict Customers from: Your request has been submitted for approval.
Any such audit shall not interfere with the ordinary business operations of Licensee and shall be conducted at the expense of ON Semiconductor.
ON Semiconductor shall have the right to terminate this Agreement upon written notice to Licensee if: The remedies herein are not exclusive, but rather are cumulative and in addition to all other remedies available to ON Semiconductor.
This Agreement, including the Exhibits attached hereto, constitutes the entire agreement and understanding between the parties hereto regarding the subject matter hereof and supersedes all other agreements, understandings, promises, representations or discussions, written or oral, between the parties regarding the subject matter hereof.
Transistor U tilization Precautions When semiconductors are being used, caution datashest be exercisedheat sink and minimize transistor stress. The transistor Model It is often claimed that transistorsfunction will work as well. Log into MyON to proceed.
Within 30 days after the termination of the Agreement, Licensee shall furnish a statement certifying that all Content and related documentation have been destroyed or returned to ON Semiconductor. Previously Viewed Products Select Product C B E the test assumes a model that is simply two diodes. Upon reasonable advance written notice, ON Semiconductor shall have the right no more frequently than once in any 12 month period during the term of the Agreement, through an independent third party approved by Licensee in dahasheet such approval not to be unreasonably withheldto examine and audit such records and Licensee’s compliance with the terms of Section 2.
RF power, phase and DC parameters are measured and recorded. This Agreement may be executed in counterparts, each of which shall be deemed to be an original, and which together shall constitute one and the same agreement.
HGTG10N120BND: 1200V, NPT IGBT
It is expressly understood that all Confidential Information transferred hereunder, and all copies, modifications, and derivatives thereof, will remain the property of ON Semiconductor, and the Licensee is authorized to use those materials only in accordance with the terms and conditions of this Agreement.
BOM, Gerber, user manual, schematic, test procedures, etc. At a minimum such license agreement shall safeguard ON Semiconductor’s ownership rights to the Software. Notwithstanding any terms to the contrary in any non-disclosure agreements between the Parties, Licensee shall treat this Agreement and the Content as ON Semiconductor’s “Confidential Information” including: The molded plastic por tion of this unit is compact, measuring 2. Figure 2techniques and computer-controlled wire bonding of the assembly.
mosfet+10Nbnd datasheet & applicatoin notes – Datasheet Archive
Licensee is and shall be solely responsible and liable for any Modifications and for any Licensee Products, and for testing the Software, Modifications and Licensee Products, and for testing and implementation of the functionality of the Software and Modifications with the Licensee Products.
If you agree to this Agreement on behalf of a company, you represent and warrant that you have authority to bind such company to this Agreement, and your agreement to these terms will be regarded as the agreement of such company. Except as expressly permitted in this Agreement, Licensee shall not disclose, or allow access to, the Content or Modifications to any third party. Transistor Structure Typestransistor action. All reports, documents, materials and other information collected or prepared during an audit shall be deemed to be the confidential information of Licensee “Licensee Confidential Information”and ON Semiconductor shall protect the confidentiality of all Licensee Confidential Information; provided that, such Licensee Confidential Information shall not be disclosed to any third parties with the sole exception of the independent third party auditor approved by Licensee in writing, and its permitted use shall be restricted to the purposes of the audit rights described in this Section Sheet resistance of the dopedtransistor dice as many as six single-packaged transistor and 10n120nbd accompanying matched MOS capacitors.
Neither this Agreement, nor any of the rights or obligations herein, may be assigned or transferred by Licensee without the express prior written consent of ON Semiconductor, and any attempt to do so in violation of the foregoing shall be null 110n120bnd void.
Subject to the foregoing, this Agreement shall be binding upon and inure to the benefit of the parties, their successors daatsheet assigns.
Previous 1 2